Directly probing the carrier transfer length in 2D-material transistors

Nature 2026 Open access

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Authors: Zi‐Liang Yang, Bo-Chao Huang, Yu-Kuan Lin, Yan-Ruei Lin, Hung-Chang Hsu, Hao-Yu Chen, Yi Wan, Kai-Wei Tseng, S M Yang, Han-Chieh Lo, You-Jia Huang, Fangyuan Zheng
+7 more Ni Yang, Wanqing Meng, Jiacheng Min, Po‐Cheng Huang, Yann­‐Wen Lan, Lain‐Jong Li, Ya‐Ping Chiu
DOI: 10.1038/s41586-026-10707-0
Cited by: 1
References: 45

Abstract

Transistors based on two-dimensional (2D) materials are on the roadmap for the beyond 1 nm logic technology node1. This stems from their ultrathin thickness and defect-free surfaces, granting remarkable electrostatic gate control2–5. The physical channel length of 2D transistors may eventually reach

Fields of Study & Subjects

2D Materials and Applications Advancements in Semiconductor Devices and Circuit Design Nanowire Synthesis and Applications

Publication details

Journal / source
Nature
Publisher
Springer Science and Business Media LLC
Volume
655
Issue
8122
Pages
350–356
Publication date
1 July 2026
Language
EN