High-temperature operation of group-III nitride high-electron-mobility transistors

Nature Electronics 2026 Open access

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Authors: Yi-Chen Liu, Jacklyn Zhu, John Niroula, Hridibrata Pal, Tomás Palacios, Savannah R. Eisner
DOI: 10.1038/s41928-026-01570-y
Cited by: 2
References: 111

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design GaN-based semiconductor devices and materials Semiconductor materials and devices

Publication details

Journal / source
Nature Electronics
Publisher
Springer Science and Business Media LLC
Volume
9
Issue
2
Pages
127–139
Publication date
20 February 2026
Language
EN