Low-temperature wafer-scale growth of ultrathin tungsten disulfide for bifunctional interconnect barriers and liners

Nature Electronics 2026 Open access

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Authors: Muhammed Juvaid Mangattuchali, Hippolyte P. A. G. Astier, Jing-Yang Chung, Hao Tan, Yue Xu, Soumyadeep Sinha, Chandan Das, Yingqian Chen, Pengmiao Zhang, Edward Kurniawan Naland, Taw Cun Chiam, Lucas M. Sassi
+3 more Ming Wah Wong, J. Sudijono, Silvija Gradečak
DOI: 10.1038/s41928-026-01592-6
Cited by: 3
References: 46

Abstract

In the future, the miniaturization of integrated circuits will require copper wires to be scaled down in the back-end-of-line (BEOL) process. This will, in turn, require a scaling down of the barrier and liner coatings that prevent copper diffusion and ensure metal adhesion to the dielectric. Here we show that thin (

Fields of Study & Subjects

Semiconductor materials and interfaces Semiconductor materials and devices Copper Interconnects and Reliability

Publication details

Journal / source
Nature Electronics
Publisher
Springer Science and Business Media LLC
Volume
9
Issue
4
Pages
379–388
Publication date
31 March 2026
Language
EN