Dual-mode superconducting diode effect enabled by in-plane and out-of-plane magnetic field

The discovery of the superconducting diode effect (SDE) is recognised as a step forward in the development of superconducting electronics. Despite the diversity in the hosting materials and device designs, SDE is usually operated in a single mode which is enabled by either out-of-plane or in-plane magnetic field/magnetization. In this work, we report the realization of a dual-mode SDE in 2H-NbS2/2H-NbSe2 heterostructures where both the out-of-plane magnetic field B⊥ and in-plane magnetic field B∣∣ can independently generate and manipulate SDE. The two modes share similar diode efficiency but exhibit two orders difference in the operational field and have rather different temperature dependence. The dual-mode SDE is most likely a result of symmetry breaking along multiple orientations. In order to showcase the potential of the dual-mode SDE in realizing advanced superconducting functionality, we propose to use B⊥-induced SDE to implement fast polarity-switching functionality and B∣∣-induced SDE to realize high-fidelity functionality. The superconducting diode effect describes non-reciprocal transport of the superconducting current and there is focus on how to engineer and apply this property practically. Here, the authors utilise a heterostructure to implement a dual-mode superconducting diode effect, where dissipationless current flows along a single direction, that can be activated by both out-of-plane and in-plane magnetic field. The dual modes share similar diode efficiency but requires different magnitude of magnetic field to be operated.