Advancing N-type doping in semiconductors through hydrogen-defect interactions

Communications Materials 2026 Open access

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Authors: Akira Kiyoi, Yusuke Nishiya, Yu‐ichiro Matsushita, T. Umeda
DOI: 10.1038/s43246-025-00955-4
Cited by: 0
References: 56

Abstract

Doing is a key approach for controlling the properties of semiconductors. Here, a new n-type doping mechanism is reported for silicon, involving hydrogen association with interstitial-type defects to generate free electrons.

Fields of Study & Subjects

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Semiconductor materials and devices

Publication details

Journal / source
Communications Materials
Volume
7
Issue
1
Publication date
13 January 2026
Language
EN