Parallel writing of magnetic tunnel junctions by electrical control of interlayer magnetic coupling

Abstract Parallel writing architectures offer orders-of-magnitude speed enhancement over single-device programming in microelectronics by enabling simultaneous operation across multiple devices. However, implementing parallel writing in spin-torque devices faces inherent challenges due to the bipolar electrical signals required for magnetization switching. Here, we propose a model enabling unipolar-current tuning of interlayer magnetic coupling energy in an orange peel coupling system. Leveraging this model, we achieve deterministic switching of magnetic tunnel junctions (MTJs) governed solely by the magnitude of unipolar current. We demonstrate parallel writing which relies on independent magnetic switching in unipolar MTJs through the coordinated application of unipolar current and voltage-controlled magnetic anisotropy (VCMA) effect. This work establishes an alternate strategy toward ultrahigh-speed spintronic devices with low energy consumption.