Antiferromagnetic domain wall in ferrimagnetic bilayers controlled by magnetic spin Hall effect

Compensated ferrimagnets have emerged as a compelling class of materials due to their unique ability to exhibit antiferromagnetic behaviors controllable via an external magnetic field. To fully exploit this capability, it is crucial to identify transport phenomena that enable electrical control of antiferromagnetic spin textures in ferrimagnets. Here, we reveal the magnetic spin Hall effect (MSHE) in compensated ferrimagnets, which generates an out-of-plane polarized spin current capable of efficiently manipulating the antiferromagnetic domain walls. By constructing heterostructures composed of under-compensated and over-compensated ferrimagnets, we demonstrate the spontaneous formation of a robust antiferromagnetic domain wall at the interface. Remarkably, this domain wall structure is impervious to magnetic fields but can be effectively controlled by MSHE-induced spin current. Our findings reveal that compensated ferrimagnets serve as a unique platform for studying antiferromagnetic spintronics, providing a novel mechanism for controlling antiferromagnetic textures through unconventional spin currents.