Bayesian optimization of multi-bit pulse encoding in In₂O₃–Al₂O₃ thin-film transistors for temporal data processing

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Authors: Javier Meza-Arroyo, Benius Dunn, Weijie Xu, Yu-Chieh Chen, Jen-Sue Chen, Julia W. P. Hsu
Cited by: 1
References: 40

Abstract

Physical reservoir computing leverages the intrinsic history-dependence and nonlinearity of hardware to encode spatiotemporal signals directly at the sensor level, enabling low-latency processing of dynamic inputs. Encoding fidelity depends on the separability of multi-state outputs, yet in practice it is often hampered by empirically chosen, suboptimal operating conditions. Here, we apply Bayesian optimization to improve the encoding performance of solution-processed Al₂O₃/In₂O₃ thin-film transistors. By exploring a five-dimensional pulse-parameter input space and using the normalized degree of separation for output state distinguishability, we demonstrate high-fidelity 6-bit temporal encoding corresponding to 64 output states. We further show that a model based on simpler 4-bit data can effectively guide optimization for more complex 6-bit tasks, substantially reducing experimental effort. Using a six-frame moving-car image sequence as a benchmark, we find that the optimized 6-bit pulse conditions significantly enhance encoding accuracy, with 4-bit derived parameters performing comparably in terms of pixel errors. Shapley Additive Explanations (SHAP) analysis further reveals that gate-pulse amplitude and drain voltage are the dominant contributors to output state separation. This work establishes a data-driven strategy for identifying optimal operating conditions in reservoir devices and outlines a framework that can be transferred to diverse material platforms and physical reservoir implementations.

Fields of Study & Subjects

Neural Networks and Reservoir Computing Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing

Publication details

Journal / source
npj Unconventional Computing
Publisher
Springer Science and Business Media LLC
Volume
3
Issue
1
Publication date
27 January 2026
Language
EN