Realization of 4-inch diameter and thick β-Ga 2 O 3 single crystals using the vertical Bridgman method

CrystEngComm 2026

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Authors: Dongyang Huang, Haotian Huang, Ziqian Xu, Yongqiang Jin, Ziming Wang, Bowen Jiang, Mingyan Pan, Ning Jia, Hongji Qi
DOI: 10.1039/d5ce01023c
Cited by: 1
References: 40

Abstract

Large-diameter β-Ga 2 O 3 bulk single crystals (4-inch, >30 mm thick) were grown by a modified vertical Bridgman method, yielding high structural quality and low-defect wafers for power device applications.

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Thin-Film Transistor Technologies

Publication details

Journal / source
CrystEngComm
Publisher
Royal Society of Chemistry (RSC)
Volume
28
Issue
14
Pages
2226–2233
Publication date
1 January 2026
Language
EN