Temperature dependent phase segregation and morphology evolution in Ca 1− x Ba x F 2 solid solution grown on Si(001) with an epitaxial CaF 2 sublayer

CrystEngComm 2026

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Authors: Кавеев Андрей Камильевич, Egor A Alexeev, E. I. Belyakova, Sh. A. Yusupova, Dmitry V Miniv

DOI: 10.1039/d5ce01069a

Cited by: 0

References: 39

Abstract

Pb 0.7 Sn 0.3 Te grown on Si(001) with an epitaxial optimized Ca 1− x Ba x F 2 sublayer.

Ferroelectric and Piezoelectric Materials Inorganic Fluorides and Related Compounds Semiconductor materials and devices

References 39