Effect of annealing on lattice engineering and luminescence in LYSO:Ce scintillators

CrystEngComm 2026

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Authors: Ke Xu, Pan Hu, Qi Zhang, Qing He, Qingyi Liu, Yanan Wang, zheng fa huang, Jing Leng, Xiaowei Lin, Yong-Cai Shi, Kunfeng Chen, LI Ling-yun
+5 more Juqing Di, Shaowei Feng, Qiping Du, Haiyong Ni, Dongfeng Xue
DOI: 10.1039/d5ce01128k
Cited by: 2
References: 49

Abstract

Annealing at 1200 °C for 10 h optimizes defect structure and luminescence in LYSO:Ce crystals, enhancing PLQY (66.01%), light output, and energy resolution under 511 and 1275 keV γ-ray excitation.

Fields of Study & Subjects

Radiation Detection and Scintillator Technologies Luminescence Properties of Advanced Materials Advanced Semiconductor Detectors and Materials

Publication details

Journal / source
CrystEngComm
Publisher
Royal Society of Chemistry (RSC)
Volume
28
Issue
12
Pages
1893–1904
Publication date
1 January 2026
Language
EN