Defect chemistry manipulation by heavy ion irradiation in Y-doped CeO 2 solid solutions
Abstract
) shows that the doped compositions offer improved resistance to radiation damage. These findings are attributed to the ballistic mixing of dopant-induced defects with those introduced by ionic implantation, thereby increasing defect recombination volume and enhancing lattice recovery. Furthermore, the defect migration and annealing mechanisms are seen to differ for the studied fluences, highlighting the specific role of sample surfaces as effective annealing sites.
Fields of Study & Subjects
Nuclear materials and radiation effects
Nuclear Materials and Properties
Advancements in Solid Oxide Fuel Cells
Publication details
- Journal / source
- Physical Chemistry Chemical Physics
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 28
- Issue
- 5
- Pages
- 3613–3623
- Publication date
- 1 January 2026
- Language
- EN