The electronic structures of β-phase (Al x Ga 1− x ) 2 O 3 studied using DFT calculations

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Authors: Ziqian Sheng, Wenjing Xu, Xiaoqing Zhou, Cien Liu, Alexander Y. Polyakov, Zhilai Fang, Ning Jia, Xiangyu Xu, Kelvin H. L. Zhang
Cited by: 0
References: 33

Abstract

alloys increases with higher aluminum content, which can be explained by the less delocalized Al 3s orbitals in place of the more delocalized Ga 4s orbitals at the conduction band minimum.

Fields of Study & Subjects

Ga2O3 and related materials Advanced Chemical Physics Studies Semiconductor materials and devices

Publication details

Journal / source
Physical Chemistry Chemical Physics
Volume
28
Issue
6
Pages
4103–4110
Publication date
1 January 2026
Language
EN