Anomalous carrier transport enhances thermoelectricity in HfSe 2 /SnX 2 (X = S, Se)-based heterostructures

Physical Chemistry Chemical Physics 2026

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Authors: Jipin Peter, Raju Kumar Biswas
DOI: 10.1039/d5cp04330a
Cited by: 1
References: 61

Abstract

Bonding-anomaly engineering in substituted homo-bilayer HfSe 2 reduces lattice thermal conductivity through modified lattice dynamics and enhanced phonon scattering, while preserving favourable electronic transport, yielding high thermoelectricity.

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices 2D Materials and Applications Chalcogenide Semiconductor Thin Films

Publication details

Journal / source
Physical Chemistry Chemical Physics
Publisher
Royal Society of Chemistry (RSC)
Volume
28
Issue
8
Pages
5571–5586
Publication date
1 January 2026
Language
EN