Modulating the contact properties of XY 2 /Sc 2 CCl 2 (X = Nb, Ni, Ti, V, Mn, Ta; Y = S, Se) heterostructures via layer number, electric field, and vertical strain

Physical Chemistry Chemical Physics 2026

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Authors: You Xie, Miao Zhang, Zheng-Yong Chen, Chen Du, Jie Li, Yan Chen, Limei Hao, Tao Zhang
DOI: 10.1039/d5cp04345j
Cited by: 3
References: 47

Abstract

interlayer coupling, and compressive strain boosts the TP to nearly 100%. This work elucidates the modulation mechanisms of 2D metal-semiconductor interfaces, providing a theoretical basis and design strategies for low-contact-resistance, high-performance 2D electronic devices.

Fields of Study & Subjects

2D Materials and Applications Organic and Molecular Conductors Research Topological Materials and Phenomena

Publication details

Journal / source
Physical Chemistry Chemical Physics
Publisher
Royal Society of Chemistry (RSC)
Volume
28
Issue
7
Pages
4699–4715
Publication date
1 January 2026
Language
EN