A GaN/HfZrCO 2 heterojunction with excellent photoresponse and superior hydrogen evolution reaction performance
Abstract
In this work, first-principles calculations are employed to investigate GaN/HfZrCO 2 heterostructures in terms of structural stability, electronic properties, optoelectronic behavior, and mechanical characteristics.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Ga2O3 and related materials
ZnO doping and properties
Publication details
- Journal / source
- Physical Chemistry Chemical Physics
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 28
- Issue
- 14
- Pages
- 8541–8555
- Publication date
- 1 January 2026
- Language
- EN