Expanding the zinc precursor toolbox: a comparative study of precursors for thermal ALD of ZnO thin films

Dalton Transactions 2026 Open access

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Authors: Jorit Obenlüneschloß, Rajesh Pathak, Vepa Rozyyev, Anil Mane, Thomas Gemming, Detlef Rogalla, Jeffrey W. Elam, Anjana Devi
DOI: 10.1039/d5dt02379c
Cited by: 1
References: 71

Abstract

X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry and nuclear reaction analysis (RBS/NRA), X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and ultraviolet-visible (UV/Vis) spectrophotometry. These measurements confirmed the formation of pure, stoichiometric, and polycrystalline ZnO films using all four Zn precursors. Although the selected precursors are chemically diverse Zn compounds, they all yielded saturating ALD processes and high-quality ZnO thin films at 200 °C. This study highlights the potential benefits of alternative zinc precursors in designing ALD processes for ZnO thin films.

Fields of Study & Subjects

ZnO doping and properties Thin-Film Transistor Technologies Phase-change materials and chalcogenides

Publication details

Journal / source
Dalton Transactions
Publisher
Royal Society of Chemistry (RSC)
Volume
55
Issue
9
Pages
3853–3865
Publication date
1 January 2026
Language
EN