Atomic layer deposition of gallium oxide using gallium triazenide and water

Materials Advances 2026 Open access

Read full text
Authors: Prosper Simbarashe Mushore, Pamburayi Mpofu, Kenichiro Mizohata, Kostas Sarakinos, Nathan J. O’Brien, Henrik Pedersen
DOI: 10.1039/d5ma01213a
Cited by: 0
References: 34

Abstract

Gallium oxide (Ga 2 O 3 ) is deposited by thermal atomic layer deposition using an gallium( iii ) triazenide and water.

Fields of Study & Subjects

Ga2O3 and related materials Semiconductor materials and devices Thin-Film Transistor Technologies

Publication details

Journal / source
Materials Advances
Volume
7
Issue
5
Pages
2874–2881
Publication date
1 January 2026
Language
EN