Piezoelectrically-enhanced 230 nm far-UV second harmonic generation in a polarity-inversion-free AlN/AlGaN strained-layer superlattice channel waveguide

Materials Advances 2026 Open access

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Authors: Shahzeb Malik, Ryo Momosaki, Hiroto Honda, Kanako Shojiki, Hideto Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama
DOI: 10.1039/d5ma01423a
Cited by: 1
References: 59

Abstract

The primary purpose of growing AlN/AlGaN SLSs was to simplify the SHG device fabrication process. The wavelength spectra and power dependency confirms the first successful demonstration of far-UV emission from a polarity-inversion-free SLS structure.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Acoustic Wave Resonator Technologies Plasmonic and Surface Plasmon Research

Publication details

Journal / source
Materials Advances
Publisher
Royal Society of Chemistry (RSC)
Volume
7
Issue
8
Pages
4208–4216
Publication date
1 January 2026
Language
EN