Aqueous HF–HBrO 4 solutions for wet-chemical etching of (100) silicon wafer surfaces
Abstract
The etching behavior of silicon (Si) in aqueous solutions of hydrofluoric acid (HF) and perbromic acid (HBrO 4 ) is investigated to expand the understanding of the dissolution mechanism of Si in halogen containing acidic etching solutions.
Fields of Study & Subjects
Silicon and Solar Cell Technologies
Semiconductor materials and devices
Silicon Nanostructures and Photoluminescence
Publication details
- Journal / source
- Materials Advances
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 7
- Issue
- 6
- Pages
- 3315–3327
- Publication date
- 1 January 2026
- Language
- EN