Side gate vertical OECTs for integrated complementary circuits

Materials Horizons 2026

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Authors: Guohong Hu, Sihui Hou, Qijun Cai, Zefeng Fan, Jianhua Chen, Liang-Wen Feng, Wei Huang
DOI: 10.1039/d5mh02080h
Cited by: 1
References: 55

Abstract

Precise performance tuning of side-gate vOECTs is achieved by engineering the gate size and gate–channel distance, which enables quasi-solid-state complementary logic circuits with fast switching speeds (<9 ms) and small footprints (<0.5 mm 2 ).

Fields of Study & Subjects

Conducting polymers and applications Advanced Memory and Neural Computing Organic Electronics and Photovoltaics

Publication details

Journal / source
Materials Horizons
Publisher
Royal Society of Chemistry (RSC)
Volume
13
Issue
9
Pages
4441–4449
Publication date
1 January 2026
Language
EN