Nano-architected GaN spinodoid metamaterials with tailorable anisotropic piezoelectric properties
Abstract
) compared to bulk GaN. These enhancements in piezoelectric performance are strongly affected by their underlying nano-architecture, which is governed by the evolutionary time during spinodal decomposition. Due to the asymmetric topology designs, GaN spinodoid metamaterials can possess more independent non-zero piezoelectric stress/strain constants as well as elastic constants compared to the bulk piezoelectric GaN. Relative density is found to further modulate the piezoelectric properties and anisotropy of the nano-architected piezoelectric materials through the contribution of surface effects and tuning the surface-to-volume ratio. This work underscores the potential of topology engineering to overcome crystallographic constraints in piezoelectric nanomaterials, opening avenues for their applications in nano-energy harvesters and three-dimensional pressure mapping/sensing nano-devices.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Acoustic Wave Resonator Technologies
Advanced Sensor and Energy Harvesting Materials
Publication details
- Journal / source
- Materials Horizons
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 13
- Issue
- 6
- Pages
- 2830–2843
- Publication date
- 1 January 2026
- Language
- EN