Tuning surface reactivity pathways through molecular inhibitor redosing for precision nanopatterning
Abstract
. 2D patterns achieved 26.5 nm (200 cycles) of selective deposition, accompanied by an undesirable lateral growth of 18.8 nm. Conversely, 3D patterns achieved 15 nm (100 cycles) of selective growth without lateral growth observation. The critical growth difference is mainly attributed to the surface topology: 3D trench structures provide a more effective physical and chemical barrier compared to 2D structures. Consequently, the results collectively demonstrate the potential of the re-dosing strategy in selectivity improvement and the critical role of topography in achieving reliable AS-ALD for 3D nanofabrication.
Fields of Study & Subjects
Nanofabrication and Lithography Techniques
Semiconductor materials and devices
Advancements in Photolithography Techniques
Publication details
- Journal / source
- Materials Horizons
- Volume
- 13
- Issue
- 10
- Pages
- 5035–5049
- Publication date
- 1 January 2026
- Language
- EN