A novel electrochemical exfoliation route to tailor the graphene bandgap through silicon incorporation: semi-metallic to semiconducting transition

Nanoscale Advances 2026 Open access

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Authors: Md. Eranul Hasan Sakib, Md. Arefin Kowser, Mohammad Rakibul Hasan Chowdhury, Md Masud Rana, Hasanuzzaman Aoyon, Abdul Ahad, Md. Abdulla Al Korais, Tasnim Alam Sayedi, Samsul Islam, Md. Masud Khan
DOI: 10.1039/d5na01111f
Cited by: 1
References: 44

Abstract

rehybridization, leading to disruption of the π-electron network and progressive bandgap opening. Graphene-rich composites exhibited higher electrical conductivity, whereas silicon-rich compositions demonstrated enhanced thermal stability due to the formation of silica-like passivation layers. This scalable synthesis route establishes a direct structure-bandgap-conductivity correlation and highlights the potential of Gr-Si composites for optoelectronic, photovoltaic and next-generation semiconductor devices.

Fields of Study & Subjects

Graphene research and applications Semiconductor materials and interfaces Fiber-reinforced polymer composites

Publication details

Journal / source
Nanoscale Advances
Publisher
Royal Society of Chemistry (RSC)
Volume
8
Issue
11
Pages
3372–3385
Publication date
1 January 2026
Language
EN