Solution-processed SnO 2 /SnS 2 bilayer-based robust memristors for reliable neuromorphic computing

Nanoscale Horizons 2026

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Authors: Xiuyang Tang, Xinming Ma, Sizhu Ha, Weifang Sun, Niwei He, Song Xue, Gangri Cai, Jin Shi Zhao
DOI: 10.1039/d5nh00779h
Cited by: 1
References: 48

Abstract

cycles, and robust retention. Beyond conventional memory behavior, the bilayer devices emulate essential synaptic functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and spike-timing dependent plasticity (STDP), and achieve ∼93% inference accuracy in artificial neural network tasks.

Fields of Study & Subjects

Advanced Memory and Neural Computing 2D Materials and Applications Transition Metal Oxide Nanomaterials

Publication details

Journal / source
Nanoscale Horizons
Publisher
Royal Society of Chemistry (RSC)
Volume
11
Issue
5
Pages
1371–1380
Publication date
1 January 2026
Language
EN