Ultrahigh mobility and Rashba spin splitting in Sb-substituted bismuth telluride and bismuth selenide

Nanoscale 2026 Open access

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Authors: Roya Kavkhani, Berna Akgenç, Kerem Anar, Akile İlknur Şahin, Annika Johansson, Mehmet C. Onbaşlı
DOI: 10.1039/d5nr03682h
Cited by: 1
References: 65

Abstract

DFT of (Bi 1− x Sb x ) 2 Te 3 and (Bi 1− x Sb x ) 2 Se 3 (0 ≤ x ≤ 1) shows Sn tunes structure, band inversion, spin texture, and transport. In Bi 2 Te 3 a pronounced Rashba splitting appears at x = 0.6 with α R = 2.098 eV Å.

Fields of Study & Subjects

Topological Materials and Phenomena 2D Materials and Applications Advanced Thermoelectric Materials and Devices

Publication details

Journal / source
Nanoscale
Publisher
Royal Society of Chemistry (RSC)
Volume
18
Issue
6
Pages
3352–3364
Publication date
1 January 2026
Language
EN