High-resistance-state tunneling in 25 nm TiO x /Y-doped HfO 2 /Pt nanocrossbar ferroelectric tunnel junctions

Nanoscale 2026 Open access

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Authors: Zhongzheng Sun, Yoshiko Nakamura, Kazuki Okamoto, Seiichiro Izawa, Hiroshi Funakubo, Yutaka Majima
DOI: 10.1039/d5nr04010h
Cited by: 0
References: 60

Abstract

, whereas the ON-state current decreased more gradually with a slope of 0.30. These contrasting area dependences are attributed to the suppression of leakage pathways along grain boundaries in the OFF state and to uniformly aligned remanent polarization within a limited number of grains in the ON state. The demonstrated nanocrossbar FTJs highlight a promising route toward high-density, energy-efficient, and CMOS-compatible integration of ferroelectric memory.

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Nanoscale
Volume
18
Issue
5
Pages
2525–2535
Publication date
1 January 2026
Language
EN