Charge transport and trap state engineering in transition metal-doped bismuth vanadate photoanodes: a DFT study
Abstract
for electrons. Additionally, the increased diffusion lengths for holes (99.2 nm) and electrons (62.89 nm) contribute to more efficient charge separation and transport. The calculated overpotential for Ti-BVO is significantly reduced to 0.41 V, compared to 0.97 V for pristine BVO, indicating a substantial improvement in reaction kinetics. These findings provide valuable insights for designing BVO-based next-generation photoanode materials.
Fields of Study & Subjects
Radiation Detection and Scintillator Technologies
Advanced Photocatalysis Techniques
Perovskite Materials and Applications
Publication details
- Journal / source
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 18
- Issue
- 9
- Pages
- 4973–4987
- Publication date
- 1 January 2026
- Language
- EN