Polarization-directed growth of single-crystalline silicon nanostructures
Abstract
polarized laser excitation. High-resolution transmission electron microscopy (HRTEM) confirmed the excellent crystallinity of the silicon structures and revealed that about 80% of them grew along the [111] orientation parallel to the laser polarization. Finally, through FDTD simulations and two-temperature model calculations, we believe that strong anisotropic field enhancement and high interfacial temperatures at the growth front contribute to polarization-directed single-crystalline silicon growth.
Fields of Study & Subjects
Thin-Film Transistor Technologies
Laser Material Processing Techniques
Optical Coatings and Gratings
Publication details
- Journal / source
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 18
- Issue
- 7
- Pages
- 3716–3722
- Publication date
- 1 January 2026
- Language
- EN