Charge transfer doping enabled high-performance deep-ultraviolet photodetectors based on CuI/β-Ga 2 O 3 heterostructures for deep-ultraviolet optical communication
Abstract
, and a relatively rapid response speed of 33.5/49.7 ms, as well. A device assembled on a plastic substrate exhibits robust mechanical flexibility. What is more, the good DUV photodetection performance enables the device to be utilized in a DUV optical communication system, functioning as a light receiver to deliver a text signal. It is expected that this DUV photodetector will find utilization in future DUV photoelectric systems.
Fields of Study & Subjects
Ga2O3 and related materials
Copper-based nanomaterials and applications
Thin-Film Transistor Technologies
Publication details
- Journal / source
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 18
- Issue
- 8
- Pages
- 4333–4342
- Publication date
- 1 January 2026
- Language
- EN