Analysis of transport mechanisms in superlattice FinFETs from room temperature to cryogenic temperature and discussion on continued scalability beyond 7 nm

Nanoscale 2026

View at publisher
Authors: Yuchen Wu, Fanyu Liu, Siyuan Chen, Kai Wang, Cheng Zhang, Zhu Junyan, Zijing Zhang, Haoyan Liu, Fei Zhao, Jing Wan, Yong Xu, Yongliang Li
+1 more Bo Li
DOI: 10.1039/d5nr04582g
Cited by: 0
References: 27

Abstract

. The reduced interface scattering under volume inversion and the reduced lattice scattering at cryogenic temperatures enable superlattice FinFETs to achieve high ballistic rates (0.81 at 77 K), as validated by low-temperature electrical measurements. Finally, by combining DFT with non-equilibrium Green's function (NEGF) simulations, the superlattice FinFETs are shown to be some of the promising candidates for sub-7 nm technology nodes.

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices 2D Materials and Applications

Publication details

Journal / source
Nanoscale
Volume
18
Issue
16
Pages
8888–8897
Publication date
1 January 2026
Language
EN