TiO 2 protective capping for EUV mirrors: superior hydrogen plasma resistance and Sn contaminants removal

Nanoscale 2026

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Authors: Sishu Wang, Zongbiao Ye, Andong Wu, Tao Gao, Jianjun Wei, Fujun Gou
DOI: 10.1039/d5nr04590h
Cited by: 1
References: 38

Abstract

The long-term stability of extreme ultraviolet (EUV) lithography mirrors relies on protective capping layers capable of resisting plasma irradiation while simultaneously facilitating the removal of Sn contaminants.

Fields of Study & Subjects

Advancements in Photolithography Techniques Silicon and Solar Cell Technologies Electron and X-Ray Spectroscopy Techniques

Publication details

Journal / source
Nanoscale
Publisher
Royal Society of Chemistry (RSC)
Volume
18
Issue
14
Pages
7470–7484
Publication date
1 January 2026
Language
EN