Sub-5 nm one-dimensional post-transition-metal monochalcogenide gate-all-around MOSFETs

Nanoscale 2026

View at publisher
Authors: Xiao-Lu Duan, Yan-Dong Guo, Ye-Wei Chen, Yue Jiang, Hao-Ran Hu, Man-Jun Jiang, Xing-Yu Ma, Jiangang Hu, Cheng-Biao Lin, Fan Guo, Hong-Li Zeng, Xiaohong Yan
DOI: 10.1039/d5nr04763c
Cited by: 0
References: 49

Abstract

= 2 nm and 3 nm, respectively. These findings establish InTe and GaTe nanowires as highly promising p-type channel materials for sub-5 nm, ultralow-power, high-performance CMOS technologies in the post-silicon era.

Fields of Study & Subjects

2D Materials and Applications Advancements in Semiconductor Devices and Circuit Design Graphene research and applications

Publication details

Journal / source
Nanoscale
Volume
18
Issue
12
Pages
6470–6480
Publication date
1 January 2026
Language
EN