Layers and phase identification of h- and m-GaTe via second harmonic generation
Abstract
points and not from simple band-edge transitions, which explains the nearly fixed SHG peak position. Polarization- and angle-resolved SHG patterns of odd-layer h-GaTe show a pronounced sixfold feature, so the crystal orientation can be identified directly. These results confirm that SHG can serve as a robust optical fingerprint that distinguishes h-GaTe from m-GaTe and that also distinguishes odd-layer h-GaTe from even-layer h-GaTe, and the method is fast, non-destructive and suitable for large-area inspection.
Fields of Study & Subjects
2D Materials and Applications
Graphene research and applications
Crystal Structures and Properties
Publication details
- Journal / source
- Nanoscale
- Volume
- 18
- Issue
- 12
- Pages
- 6481–6488
- Publication date
- 1 January 2026
- Language
- EN