Electronic and magnetic properties of defective and Fe-doped InS monolayers adjusted by hole doping as a second functionalization step: a first-principles study

RSC Advances 2026 Open access

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Authors: Nguyễn Thành Tiên, Nguyen Thanh Son, Truong Tuan Vu, Rodrigo Ponce-Pérez, J. Guerrero-Sánchez, D.M. Hoat
DOI: 10.1039/d5ra07951a
Cited by: 0
References: 61

Abstract

@mo system, despite its magnetic moment reducing. In addition, the electronic structures of the considered InS systems can be effectively controlled by hole doping, where the hole level plays a key role. Our findings pave a solid way to functionalize the InS monolayer towards diverse spintronic and optoelectronic applications.

Fields of Study & Subjects

2D Materials and Applications Graphene research and applications Topological Materials and Phenomena

Publication details

Journal / source
RSC Advances
Volume
16
Issue
4
Pages
3638–3647
Publication date
1 January 2026
Language
EN