Fabrication and characterization of efficient visible-NIR CdS/porous Si/p-Si photodetectors via laser-enhanced chemical bath deposition

RSC Advances 2026 Open access

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Authors: Raghad H. Mohsin, Hasan A. Hadi, Raid A. Ismail
DOI: 10.1039/d5ra08224b
Cited by: 2
References: 42

Abstract

at 480 nm when laser illumination is applied during deposition. Additionally, the rise and fall times of the photodetector fabricated with laser illumination are 159 ms and 208 ms, respectively. The results indicate improved spectral response and external quantum efficiency (EQE), enhanced detection capability, and reduced noise equivalent power (NEP), signifying greater device sensitivity to laser light.

Fields of Study & Subjects

Silicon Nanostructures and Photoluminescence Chalcogenide Semiconductor Thin Films Semiconductor materials and interfaces

Publication details

Journal / source
RSC Advances
Publisher
Royal Society of Chemistry (RSC)
Volume
16
Issue
4
Pages
3207–3219
Publication date
1 January 2026
Language
EN