Effects of Sn doping content on the structure, morphology, optical and electrical properties of ITO thin films prepared by microwave-assisted spray pyrolysis

RSC Advances 2026 Open access

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Authors: Yulun Feng, Leyuan Zhang, Leyuan Zhang, Haoran Chen, Lihua Zhang, Lihua Zhang, Xin Guo, Xi Liu, Shenghui Guo
DOI: 10.1039/d5ra09041e
Cited by: 0
References: 32

Abstract

Indium tin oxide (ITO) thin films with 0–20 wt% SnO 2 were prepared via microwave-assisted spray pyrolysis. The 10 wt% SnO 2 -doped film shows optimal optoelectronic performance, suitable for transparent conductive electrodes.

Fields of Study & Subjects

ZnO doping and properties Thin-Film Transistor Technologies Nanomaterials and Printing Technologies

Publication details

Journal / source
RSC Advances
Volume
16
Issue
8
Pages
7538–7548
Publication date
1 January 2026
Language
EN