First-principles study of d 0 magnetism in a SnI 2 monolayer induced by P and As impurities

RSC Advances 2026 Open access

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Authors: Pham Minh Tan, Nguyen Thanh Son, Duy Khanh Nguyen, J. Guerrero-Sánchez, D. M. Hoat
DOI: 10.1039/d5ra09400c
Cited by: 1
References: 68

Abstract

magnetism and enable promising applications in magnetic-field sensing and magnetoresistive random-access memory (MRAM) fabrication.

Fields of Study & Subjects

2D Materials and Applications ZnO doping and properties Heusler alloys: electronic and magnetic properties

Publication details

Journal / source
RSC Advances
Publisher
Royal Society of Chemistry (RSC)
Volume
16
Issue
14
Pages
12628–12638
Publication date
1 January 2026
Language
EN