Impact of variations in ALD procedure on nanomorphology, protecting properties and chemical stability of thin TiO 2 films

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Authors: Hana Krýsová, Tomáš Imrich, Hana Tarábková, Pavel Janda, Josef Krýsa
Cited by: 1
References: 38

Abstract

Thin TiO 2 films were deposited by atomic layer deposition (ALD) at 150 and 250 °C on FTO and Si/SiO 2 substrates to examine the effect of deposition conditions on morphology, structure, chemical stability, and photoelectrochemical performance.

Fields of Study & Subjects

Semiconductor materials and devices TiO2 Photocatalysis and Solar Cells Copper Interconnects and Reliability

Publication details

Journal / source
RSC Advances
Publisher
Royal Society of Chemistry (RSC)
Volume
16
Issue
10
Pages
8658–8666
Publication date
1 January 2026
Language
EN