Impact of variations in ALD procedure on nanomorphology, protecting properties and chemical stability of thin TiO 2 films
Abstract
Thin TiO 2 films were deposited by atomic layer deposition (ALD) at 150 and 250 °C on FTO and Si/SiO 2 substrates to examine the effect of deposition conditions on morphology, structure, chemical stability, and photoelectrochemical performance.
Fields of Study & Subjects
Semiconductor materials and devices
TiO2 Photocatalysis and Solar Cells
Copper Interconnects and Reliability
Publication details
- Journal / source
- RSC Advances
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 16
- Issue
- 10
- Pages
- 8658–8666
- Publication date
- 1 January 2026
- Language
- EN