Comprehensive analysis of Rb 2 Mg 2 (WO 4 ) 3 : structural, morphological, dielectric, and CBH model-based charge transport for optoelectronic applications
Abstract
exhibits exceptionally high permittivity alongside ultra-low dielectric loss, positioning it as a standout candidate for high-performance capacitors, microwave devices, and advanced microelectronics. This work not only advances the fundamental understanding of charge transport in complex tungstates but also paves the way for their practical deployment in energy-efficient technologies.
Fields of Study & Subjects
Thermal Expansion and Ionic Conductivity
Transition Metal Oxide Nanomaterials
Heusler alloys: electronic and magnetic properties
Publication details
- Journal / source
- RSC Advances
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 16
- Issue
- 12
- Pages
- 11117–11129
- Publication date
- 1 January 2026
- Language
- EN