Investigation of interfacial charge-carrier dynamics, degradation, and recombination mechanisms in single-junction perovskite solar cells with NiO x and SAM hole-transporting layers via steady-state drift-diffusion model simulations

Sustainable Energy & Fuels 2026 Open access

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Authors: Ivona Kafedjiska, Vincent Marc Le Corre, Hans Köbler, Igal Levine, Rutger Schlatmann, Iver Lauermann
DOI: 10.1039/d5se00474h
Cited by: 1
References: 85

Abstract

Surface defects of low-temperature sputtered NiO x migrate into the perovskite bulk and are detrimental to the NiO x –perovskite interface and the cell stability. Bulk doping with copper and/or SAM surface passivation of the NiO x improve the stability.

Fields of Study & Subjects

Perovskite Materials and Applications Chalcogenide Semiconductor Thin Films Silicon and Solar Cell Technologies

Publication details

Journal / source
Sustainable Energy & Fuels
Publisher
Royal Society of Chemistry (RSC)
Volume
10
Issue
4
Pages
1174–1191
Publication date
1 January 2026
Language
EN