Off-stoichiometry-driven electronic structure modulation leads to high thermoelectric performance in n-type InSb: an experimental study with theoretical insights

Journal of Materials Chemistry A 2026

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Authors: Usharani Valaparla, Subhajit Sau, Manojkumar Moorthy, Sinorul Haque, Tanmoy Ghosh, Amarnath R. Allu, Subhradeep Chatterjee, V. Kanchana, Suresh Perumal
DOI: 10.1039/d5ta08992a
Cited by: 2
References: 51

Abstract

The off-stoichiometry in InSb via Sb-deficiency induces resonant-like defect states around the Fermi level, E F , resulting in enhanced Seebeck coefficient and thereby thermoelectric performance.

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Thermal properties of materials Phase-change materials and chalcogenides

Publication details

Journal / source
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
14
Pages
8120–8131
Publication date
1 January 2026
Language
EN