Impurity band engineering and hierarchical defect scattering enable high zT in Co-doped AgSbTe 2

Journal of Materials Chemistry A 2026

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Authors: Ting Lu, Huangshui Ma, Mingquan Li, Xiaolei Shi, Meng Li, Yuan Wang, Pingan Song, Siqi Huo, Zhi-Gang Chen, Min Hong
DOI: 10.1039/d5ta09240j
Cited by: 5
References: 83

Abstract

Co doping suppresses Ag 2 Te formation in AgSbTe 2 and creates an impurity band above the valence edge. Besides, multiscale defects enhance phonon scattering, reduce thermal conductivity, and deliver a peak figure of merit of 1.6 at 648 K.

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Chalcogenide Semiconductor Thin Films Heusler alloys: electronic and magnetic properties

Publication details

Journal / source
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
18
Pages
10755–10763
Publication date
1 January 2026
Language
EN