Defect passivation by annealing enables stable transport in Li-doped Mg 2 Sn epitaxial films for microfabricated thermoelectric devices

Journal of Materials Chemistry A 2026 Open access

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Authors: Kenneth Magallon Senados, T. Aizawa, I. Ohkubo, Masayuki Murata, Takahiro Baba, Akihiko Ohi, Akira Uedono, Takeaki Sakurai, Takao Mori
DOI: 10.1039/d5ta09301e
Cited by: 5
References: 48

Abstract

Post-growth annealing suppresses defect-driven instability in Li-doped Mg 2 Sn epitaxial thin films, increasing mobility and power factor. Stable p-type transport translates to improved micro-TE device output.

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Thermal Expansion and Ionic Conductivity Advanced Battery Materials and Technologies

Publication details

Journal / source
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
18
Pages
10764–10775
Publication date
1 January 2026
Language
EN