Lattice plainification and high symmetry enhance the thermoelectric performance of n-type Bi 2 Te 3 -based materials

Journal of Materials Chemistry A 2026

View at publisher
Authors: Chao Liang, Yi Wen, Shulin Bai, Rong Liu, Huiqiang Liang, Xin Qian, Yating Yuan, Xiaoqian Wang, Xiaokun Feng, Zhenguo Bai, Wanxuan Chen, Yiqing Jia
+8 more Tian Gao, Sining Wang, Yuting Qiu, Yongjin Chen, Xiang Gao, H. L. Shi, Lizhong Su, Peikang Bai
DOI: 10.1039/d5ta09397j
Cited by: 4
References: 63

Abstract

Interstitial In doping suppresses the formation of anion vacancies, alters local bond angles, enhances symmetry, and improves µ . It introduces resonant energy levels, increases m * , synergistically optimizing S and σ , and improving PF and ZT .

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Topological Materials and Phenomena Phase-change materials and chalcogenides

Publication details

Journal / source
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
18
Pages
10785–10793
Publication date
1 January 2026
Language
EN