Boosting the photoelectrochemical performance of ZnIn 2 S 4 photoanodes via antimony-induced defect and surface homojunction engineering

Journal of Materials Chemistry A 2026 Open access

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Authors: Yequan Xiao, Niu Wang, Ziyi Zhang, Yujie Zou, Bowen Li, Zeyu Fan, Ronghua Li, Yulong Qiao, Ting Xiao, Lihua Jiang, Haijiao Xie, Jingfu He
+4 more Xiaobo Chen, Yanbo Li, Changli Li, Xinyu Tan
DOI: 10.1039/d5ta09927g
Cited by: 2
References: 53

Abstract

Sb-induced O-related defect engineering promotes lattice/near-lattice oxygen incorporation and a surface/bulk homojunction in ZnIn 2 S 4 , thereby enhancing charge separation and improving PEC activity under anodic operation.

Fields of Study & Subjects

Chalcogenide Semiconductor Thin Films Advanced Photocatalysis Techniques TiO2 Photocatalysis and Solar Cells

Publication details

Journal / source
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
16
Pages
9657–9667
Publication date
1 January 2026
Language
EN