Versatile roles of elemental doping in the optimization of the thermoelectric performance of R-GeTe studied by first principles calculations

Journal of Materials Chemistry A 2026

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Authors: Suiting Ning, Ziye Zhang, Xinran Hu, Qianqian Ai, quankun Zhang, Zhiyuan Chen, Zhiquan Chen
DOI: 10.1039/d5ta10099b
Cited by: 2
References: 84

Abstract

The intrinsic mechanism of the effects of eight dopants on the electrical and phonon properties of R-GeTe was comprehensively studied, including defect formation energy, band structure and lattice thermal conductivity.

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Phase-change materials and chalcogenides 2D Materials and Applications

Publication details

Journal / source
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
17
Pages
10065–10078
Publication date
1 January 2026
Language
EN