CsCl seed layer engineering for buried-interface modification enabling >20% efficiency in single-source vapor-deposited perovskite solar cells

Journal of Materials Chemistry A 2026

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Authors: Lin Yang, Junpeng Xie, Zhenhuang SU, Tianjiao Chu, Yiran Yan, Zhihong Xie, Jin Huang, Xiaofei Ji, Bingchen He, Xiangrong Zhu, Linfeng Lu
DOI: 10.1039/d5ta10131j
Cited by: 1
References: 34

Abstract

The CsCl seed layer enables regulated crystallization and interfacial engineering in single-source vapor-deposited perovskite films, leading to a PCE of 20.26%, which ranks among the highest-performing dry-processed single-junction PSCs.

Fields of Study & Subjects

Perovskite Materials and Applications TiO2 Photocatalysis and Solar Cells Chemical and Physical Properties of Materials

Publication details

Journal / source
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
22
Pages
13462–13470
Publication date
1 January 2026
Language
EN