Atomic-layer precision etching of SiO 2 using sequential molecular adsorption and plasma activation
Abstract
A novel cycle-mode etching strategy combining reversible physisorption and a defect-mediated chemisorption achieves 1.4 Å per cycle, contamination-free, directional SiO 2 etching.
Fields of Study & Subjects
Semiconductor materials and devices
Nanowire Synthesis and Applications
Silicon and Solar Cell Technologies
Publication details
- Journal / source
- Journal of Materials Chemistry C
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 14
- Issue
- 3
- Pages
- 1009–1017
- Publication date
- 1 January 2026
- Language
- EN