Nanopatterning optimization of zinc phosphide: hole mobility up to 560 cm 2 /V s with selective area epitaxy

Journal of Materials Chemistry C 2026 Open access

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Authors: Raphaël François Lemerle, Helena R. Freitas, Thomas Hagger, Didem Dede, Leo Webb, Cynthia Paloma Aigroz, Valerio Piazza, María Chiara Spadaro, Jordi Arbiol, Anna Fontcuberta i Morral
DOI: 10.1039/d5tc03582a
Cited by: 1
References: 45

Abstract

This study shows how selective area epitaxy can be used to improve carrier transport in Zn 3 P 2 and how structural defects, such as rotated domains (RD) interfaces or misfit dislocations (MDs), can affect the optoelectronic properties.

Fields of Study & Subjects

Nanowire Synthesis and Applications Chalcogenide Semiconductor Thin Films Chemical and Physical Properties of Materials

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
21
Pages
8950–8959
Publication date
1 January 2026
Language
EN